Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3by plasma-assisted molecular beam epitaxy

被引:0
|
作者
20144100085898
机构
[1] Sobanska, Marta
[2] Klosek, Kamil
[3] Borysiuk, Jolanta
[4] Kret, Slawomir
[5] Tchutchulasvili, Giorgi
[6] Gieraltowska, Sylwia
[7] Zytkiewicz, Zbigniew R.
来源
Sobanska, Marta | 1600年 / American Institute of Physics Inc.卷 / 115期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3
    Calabrese, G.
    Gao, G.
    van Treeck, D.
    Corfdir, P.
    Sinito, C.
    Auzelle, T.
    Trampert, A.
    Geelhaar, L.
    Brandt, O.
    Fernandez-Garrido, S.
    NANOTECHNOLOGY, 2019, 30 (11)
  • [42] Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy
    Schenk, HPD
    Kipshidze, GD
    Lebedev, VB
    Shokhovets, S
    Goldhahn, R
    Kräusslich, J
    Fissel, A
    Richter, W
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 359 - 364
  • [43] Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy
    Park, Jinsub
    Yao, Takafumi
    THIN SOLID FILMS, 2013, 531 : 88 - 92
  • [44] Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy
    Shim, KH
    Hong, SE
    Kim, KH
    Paek, MC
    Cho, KI
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 383 - 388
  • [45] Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy
    Corrion, A
    Wu, F
    Mates, T
    Gallinat, CS
    Poblenz, C
    Speck, JS
    JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) : 587 - 595
  • [46] Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
    S. N. Timoshnev
    A. M. Mizerov
    M. S. Sobolev
    E. V. Nikitina
    Semiconductors, 2018, 52 : 660 - 663
  • [47] Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity
    Sagar, A
    Lee, CD
    Feenstra, RM
    Inoki, CK
    Kuan, TS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1812 - 1817
  • [48] A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
    Fernández-Garrido, S.
    Grandal, J.
    Calleja, E.
    Sánchez-García, M.A.
    López-Romero, D.
    Journal of Applied Physics, 2009, 106 (12):
  • [49] Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
    Smorchkova, IP
    Haus, E
    Heying, B
    Kozodoy, P
    Fini, P
    Ibbetson, JP
    Keller, S
    DenBaars, SP
    Speck, JS
    Mishra, UK
    APPLIED PHYSICS LETTERS, 2000, 76 (06) : 718 - 720
  • [50] A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
    Fernandez-Garrido, S.
    Grandal, J.
    Calleja, E.
    Sanchez-Garcia, M. A.
    Lopez-Romero, D.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)