共 50 条
- [44] Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 383 - 388
- [46] Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy Semiconductors, 2018, 52 : 660 - 663
- [47] Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1812 - 1817
- [48] A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111) Journal of Applied Physics, 2009, 106 (12):