Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

被引：0
|
作者：
Deng, Xu-Guang [1 ]
Han, Jun [1 ]
Xing, Yan-Hui [1 ]
Wang, Jia-Xing [1 ]
Fan, Ya-Ming [2 ]
Chen, Xiang [1 ]
Li, Ying-Zhi [1 ]
Zhu, Jian-Jun [2 ]
机构：
[1] Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[2] Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech. and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
来源：
Guangdianzi Jiguang/Journal of Optoelectronics Laser | 2013年 / 24卷 / 07期
关键词：
Aluminum nitride;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：1338 / 1343
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