InGaAs/AlGaAs quantum-wire FET structure in self-organized way by MBE

被引：0

作者：

Zhang, Wenjun ^{[1
]}

Yan, Fawang ^{[1
]}

Cui, Qi ^{[1
]}

Zhang, Ronggui ^{[1
]}

Li, Xianjie ^{[1
]}

机构：

[1] Hebei Semi-conduct. Res. Inst., Shijiazhuang 050051, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics | 2002年 / 22卷 / 02期

关键词：

Atomic force microscopy - Field effect transistors - Photoluminescence - Self assembly - Semiconductor quantum wires;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

InGaAs/GaAs quantum wire (QWR) structure was grown in self-organized way on a high-index[(553)B-oriented] GaAs substrate by MBE. Surface morphologies of the In0.15 Ga0.85As epitaxial layers were studied using atomic force microscope (AFM). It was revealed that the density of the QWR array was as high as 4 × 105 cm-1. The optical characteristics of the samples were investigated by polarized photoluminescence (PPL) at low temperature (12 K). The PL peak at λ=868 nm from the (553) B QWR array showed a very small full width at half-maximum (FWHM) of 9.2 meV and large polarization anisotropy [p=(I-I⊥)/(I+I⊥)=0.22]. These results have proven that the high uniform, high-density and good one dimensionality features of the In0.15Ga0.85As/GaAs quantum wires were naturally formed. The developed QWR structure has been applied to FET device fabrication with AlGaAs as the barrier layer, which performed a good DC characteristic and had a maximum transconductance of 110 mS/mm.

引用

页码：223 / 226

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