Characteristics analysis of n-GaInP2/p-Ge heterojunction thermophotovoltaic cells

被引:0
|
作者
Ji, Wei-Wei [1 ]
Zhang, Chao [1 ]
Zhang, De-Liang [2 ]
Qiao, Zai-Xiang [1 ]
机构
[1] The No.18 Institute of China Electronic Technology Group Corporation, Tianjin, China
[2] Army 71496 of Shandong Province, Yantai, China
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:2804 / 2809
相关论文
共 50 条
  • [41] Highly reflective and passivated ohmic contacts in p-Ge by laser processing of aSiCx:H(i)/Al2O3/aSiC films for thermophotovoltaic applications
    Gamel, M.
    Lopez, G.
    Medrano, A. M.
    Jimenez, A.
    Datas, A.
    Garin, M.
    Martin, I.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2024, 265
  • [42] Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition
    Gammon, P. M.
    Perez-Tomas, A.
    Jennings, M. R.
    Shah, V. A.
    Boden, S. A.
    Davis, M. C.
    Burrows, S. E.
    Wilson, N. R.
    Roberts, G. J.
    Covington, J. A.
    Mawby, P. A.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (12)
  • [43] Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure
    M. M. Gadzhialiev
    Z. Sh. Pirmagomedov
    T. N. Efendieva
    Semiconductors, 2016, 50 : 1054 - 1055
  • [44] Current–voltage characteristic of a p-Ge/n-GaAs heterostructure with oncoming heat fluxes
    M. M. Gadzhialiev
    Z. Sh. Pirmagomedov
    Russian Physics Journal, 2013, 55 : 1240 - 1242
  • [45] Effect of substrate off-orientation on the characteristics of GaInP/AlGaInP single heterojunction solar cells
    Kim, Junghwan
    Shin, Hyun-Beom
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2019, 36 (02) : 305 - 311
  • [46] Photo-Induced Negative Differential Transconductance in Back-Gated Layered MoSe2/p-Ge Heterojunction Field Effect Transistors
    Uddin, Wasi
    Dhyani, Veerendra
    Ahmad, Gufran
    Kumar, Vikram
    Muduli, Pranaba K.
    Das, Samaresh
    ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (06) : 1567 - 1573
  • [47] Effect of substrate off-orientation on the characteristics of GaInP/AlGaInP single heterojunction solar cells
    Junghwan Kim
    Hyun-Beom Shin
    Korean Journal of Chemical Engineering, 2019, 36 : 305 - 311
  • [48] P-Ge/Sn π Interactions Versus Arene•••Ge/Sn Contacts for the Stabilization of Diphosphatetrylenes, (R2P)2E (E = Ge, Sn)
    Izod, Keith
    Evans, Peter
    Waddell, Paul G.
    INORGANIC CHEMISTRY, 2020, 59 (01) : 863 - 874
  • [49] Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells
    Takabe, Ryota
    Yachi, Suguru
    Tsukahara, Daichi
    Toko, Kaoru
    Suemasu, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (05)
  • [50] Designing a Heterojunction N plus on P GaSb Thermophotovoltaic Cell with hydrogenated Amorphous Silicon Interface Passivation
    Fraas, Lewis M.
    Tang, Liangliang
    Zhang, Yi
    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 0887 - 0890