Improved performance of a SWCNT/ZnO nanostructure-integrated silicon thin-film solar cell: role of annealing temperature

被引：0

作者：

Mufti, Nandang ^{[1
,2
]}

Ardilla, Olga Dilivia ^{[1
]}

Yuliana, Erma Surya ^{[1
]}

Wulandari, Retno Fitri ^{[1
]}

Taufiq, Ahmad ^{[1
,2
]}

Setiyanto, Henry ^{[3
]}

Aziz, Muhammad ^{[4
]}

Salim, Ali Aqeel ^{[2
,5
]}

Suryana, Risa ^{[6
]}

Septina, Wilman ^{[7
]}

机构：

[1] Univ Negeri Malang, Fac Math & Nat Sci, Dept Phys, Jl Semarang 5, Malang 65145, Indonesia

[2] Univ Negeri Malang, Ctr Adv Mat Renewable Energy, Jl Semarang 5, Malang 65145, Indonesia

[3] Inst Teknol Bandung, Analyt Chem Res Grp, Jl Ganesha 10 Bandung, Bandung 40132, Indonesia

[4] Univ Tokyo, Inst Ind Sci, Tokyo, Japan

[5] Univ Teknol Malaysia UTM, Ibnu Sina Inst Sci & Ind Res, Laser Ctr, Skudai 81310, Johor, Malaysia

[6] Univ Sebelas Maret, Fac Math & Nat Sci, Dept Phys, Surakarta 57126, Indonesia

[7] Natl Res & Innovat Agcy BRIN, Res Ctr Elect, Bandung, Indonesia

来源：

MATERIALS ADVANCES | 2024年 / 5卷 / 22期

关键词：

CARBON NANOTUBES; RECENT PROGRESS; ZNO; EFFICIENCY; HETEROJUNCTIONS;

D O I：

10.1039/d4ma00726c

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Efficiency improvement of heterogeneous silicon thin-film solar cells (SiTFSCs) remains challenging. Thus, single-walled carbon nanotube (SWCNT) and zinc oxide nanostructures (ZnO NCs) were integrated into Si thin films using the spray-spin coating approach to realize such solar cells. The effect of various annealing temperatures (100-175 degrees C) on the solar cells' efficiency, structure, morphology, and absorbance was assessed. X-ray diffraction analysis confirmed the existence of highly crystalline wurtzite and hexagonal structures corresponding to ZnO and graphite with maximum nanocrystallite sizes of 51.92 nm. Scanning electron microscopy images of the samples showed uniform surface morphology without any aggregation. In addition, with the increase of the annealing temperature from 100 to 175 degrees C, the efficiency, porosity, optical absorbance bands, and band gap energy of the films were increased from 17.0-18.6%, 70-74.8%, 246-326 nm, and 2.0-2.5 eV, respectively. It was asserted that by controlling the annealing temperature, the overall performance of the proposed SWCNT/ZnO NC-integrated SiTFSC can be enhanced, contributing to the further advancement of high-performance Si-based photovoltaics.

引用

页码：9018 / 9031

页数：14

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