Effects of Ce, Cr and Er doping and annealing conditions on the microstructural features and electrical properties of PbZrO3 thin films prepared by sol-gel process

被引：24
|
作者：
Mensur Alkoy, Ebru [1 ,2 ]
Alkoy, Sedat [1 ,3 ]
Shiosaki, Tadashi [1 ]
机构：
[1] Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan
[2] Department of Physics, Kocaeli University, 41300 Izmit, Kocaeli, Turkey
[3] Electronic Materials Laboratory, Department of Materials Science and Engineering, Cebze Institute of Technology, 41400 Gebze, Kocaeli, Turkey
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 9 A期
关键词：
D O I：
10.1143/JJAP.44.6654
中图分类号：
学科分类号：
摘要：
15
引用
收藏
页码：6654 / 6660
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