Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-K gate dielectrics on sige: A comparative study

被引：0
|
作者：
机构：
来源：
| 1600年 / American Institute of Physics Inc.卷 / 90期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Demonstration of Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
    Ren, F
    Hong, M
    Kuo, JM
    Hobson, WS
    Tsai, HS
    Lothian, JR
    Mannaerts, JP
    Kwo, J
    Chu, SNG
    Lin, J
    Chen, YK
    Cho, AY
    55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 78 - 79
  • [42] Initial growth of Ga2O3(Gd2O3) on GaAs:: Key to the attainment of a low interfacial density of states
    Hong, M
    Lu, ZH
    Kwo, J
    Kortan, AR
    Mannaerts, JP
    Krajewski, JJ
    Hsieh, KC
    Chou, LJ
    Cheng, KY
    APPLIED PHYSICS LETTERS, 2000, 76 (03) : 312 - 314
  • [43] Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs
    Tu, LW
    Lee, YC
    Lee, KH
    Lai, CM
    Lo, I
    Hsieh, KY
    Hong, M
    APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2038 - 2040
  • [44] Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFET's
    Ren, F
    Kuo, JM
    Hong, M
    Hobson, WS
    Lothian, JR
    Lin, J
    Tsai, HS
    Mannaerts, JP
    Kwo, J
    Chu, SNG
    Chen, YK
    Cho, AY
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) : 309 - 311
  • [45] Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs
    Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
    不详
    不详
    Appl Phys Lett, 14 (2038-2040):
  • [46] Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
    Lay, TS
    Huang, KH
    Hung, WH
    Hong, M
    Kwo, J
    Mannaerts, JP
    SOLID-STATE ELECTRONICS, 2001, 45 (03) : 423 - 426
  • [47] Self-aligned Inversion Channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as Gate Dielectrics
    Chiu, H. C.
    Lin, T. D.
    Chang, P.
    Lee, W. C.
    Chiang, C. H.
    Kwo, J.
    Lin, Y. S.
    Hsu, Shawn S. H.
    Tsai, W.
    Hong, M.
    PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, 2009, : 141 - +
  • [48] RETENTION OF ADDITIVES IN Y2O3 GD2O3 LA2O3 AND ALPHA-AL2O3
    PASTOR, RC
    KIMURA, H
    PODOKSIK, L
    CERNICHIARI, O
    PEARSON, MA
    JOURNAL OF CHEMICAL PHYSICS, 1968, 48 (08): : 3830 - +
  • [49] Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy
    Lay, TS
    Liao, YY
    Hung, WH
    Hong, M
    Kwo, J
    Mannaerts, JP
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 624 - 628
  • [50] Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing
    Lee, Y. J.
    Lee, C. H.
    Tung, L. T.
    Chiang, T. H.
    Lai, T. Y.
    Kwo, J.
    Hsu, C-H
    Hong, M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (13)
12345