Influences of ambient oxygen pressure on the crystalline orientation of CeO2/Si thin films prepared by pulsed laser deposition

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Li, Meiya
Wang, Zhonglie
Fan, Shoushan
Zhao, Qingtai
Xiong, Guangcheng
Lin, Kuixun
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Cerium compounds - Crystalline materials - Deposition - Oxygen - Pulsed laser applications - Silicon;
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A series of CeO2 thin films were deposited on Si(100) substrates at different deposition temperatures and oxygen pressures by pulsed laser deposition. X-ray diffraction reveals that the crystalline orientation of the films grown at low oxygen pressure is (111) orientation, while that grown at a relative high oxygen pressure is (100) orientation. Oxygen pressure is important to control the crystalline orientation.
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页码:159 / 161
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