Influences of ambient oxygen pressure on the crystalline orientation of CeO2/Si thin films prepared by pulsed laser deposition

A series of CeO2 thin films were deposited on Si(100) substrates at different deposition temperatures and oxygen pressures by pulsed laser deposition. X-ray diffraction reveals that the crystalline orientation of the films grown at low oxygen pressure is (111) orientation, while that grown at a relative high oxygen pressure is (100) orientation. Oxygen pressure is important to control the crystalline orientation.