High-quality InGaN films grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy

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[1] [1,Shen, Xu-Qiang
[2] Ide, Toshihide
[3] Shimizu, Mitsuaki
[4] Hara, Shiro
[5] Okumura, Hajime
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Shen, Xu-Qiang | 1600年 / JJAP, Tokyo卷 / 39期
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