High-quality InGaN films grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy

被引：0
|
作者：
机构：
[1] [1,Shen, Xu-Qiang
[2] Ide, Toshihide
[3] Shimizu, Mitsuaki
[4] Hara, Shiro
[5] Okumura, Hajime
来源：
Shen, Xu-Qiang | 1600年 / JJAP, Tokyo卷 / 39期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] High-quality InGaN films grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy
    Shen, XQ
    Ide, T
    Shimizu, M
    Hara, S
    Okumura, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (12B): : L1270 - L1272
  • [2] High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy
    Shen, XQ
    Ide, T
    Shimizu, M
    Okumura, H
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5731 - 5733
  • [3] Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxy
    Shen, XQ
    Ide, T
    Shimizu, M
    Okumura, H
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1148 - 1152
  • [4] Growth and characterization of InGaN/GaN multiple quantum wells on Ga-polarity GaN by plasma-assisted molecular beam epitaxy
    Shen, XQ
    Ide, T
    Shimizu, M
    Sasaki, F
    Okumura, H
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (01): : 99 - 102
  • [5] Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy
    Shen, XQ
    Ide, T
    Cho, SH
    Shimizu, M
    Hara, S
    Okumura, H
    Sonoda, S
    Shimizu, S
    JOURNAL OF CRYSTAL GROWTH, 2000, 218 (2-4) : 155 - 160
  • [6] Optical and electrical properties of GaN films with Ga-polarity grown by radio-frequency plasma-assisted molecular beam epitaxy
    Shen, XQ
    Ide, T
    Cho, SH
    Shimizu, M
    Hara, S
    Okumura, H
    Sonoda, S
    Shimizu, S
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 162 - 165
  • [7] Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy
    Ko, HJ
    Chen, YF
    Yao, T
    Miyajima, K
    Yamamoto, A
    Goto, T
    APPLIED PHYSICS LETTERS, 2000, 77 (04) : 537 - 539
  • [8] Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy
    Zhu, CF
    Xie, JQ
    Fong, WK
    Surya, C
    MATERIALS LETTERS, 2003, 57 (16-17) : 2413 - 2416
  • [9] Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy
    Ko, HJ
    Chen, YF
    Hong, SK
    Wenisch, H
    Yao, T
    Look, DC
    APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3761 - 3763
  • [10] Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN
    Hong, SK
    Hanada, T
    Ko, HJ
    Chen, YF
    Yao, T
    Imai, D
    Araki, K
    Shinohara, M
    Saitoh, K
    Terauchi, M
    PHYSICAL REVIEW B, 2002, 65 (11) : 1 - 10
12345