Radial distribution of grown-in oxygen precipitates in a 300 mm nitrogen-doped Czochralski silicon wafer

被引：0
|
作者：
Tian, Daxi [1 ]
Ma, Xiangyang [1 ]
Zeng, Yuheng [1 ]
Yang, Deren [1 ]
Que, Duanlin [1 ]
机构：
[1] State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 01期
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摘要：
12
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页码：123 / 127
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