Total dose effect on optocouplers subjected to different dose rate irradiation

被引：0
|
作者：
机构：
[1] Huang, Shaoyan
[2] Liu, Minbo
[3] Yao, Zhibin
[4] Sheng, Jiangkun
[5] Xiao, Zhigang
[6] He, Baoping
[7] Wang, Zujun
[8] Tang, Benqi
来源：
Huang, S. (huangshaoyan@nint.ac.cn) | 1600年 / 26期
关键词：
Phototransistors - Optoelectronic devices - Light transmission;
D O I：
10.11884/HPLPB201426.084001
中图分类号：
学科分类号：
摘要：
60Coγ irradiation on optocouplers is examined at dose rate of 0.01, 0.1, 1.0 and 50 rad/s. The experimental results show that current transfer ratio decreases after exposure and the amplitude of degradation at a given total dose depends on the dose rate, namely more degradation with lower dose rate. The I-V characteristics of LED, gain and primary photocurrent of phototransistor, and transmission loss in optical coupling medium are tested and analyzed, which lead to a conclusion that photoresponse degradation in C-B region of phototransistor is the main contribution to CTR degradation of optocouplers.
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