1.3-1.6-μm-wavelength quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates

被引:0
|
作者
机构
[1] Matsuda, S.
[2] Asahi, H.
[3] Mori, J.
[4] Watanabe, D.
[5] Asami, K.
来源
Asahi, H. (asahi@sanken.osaka-u.ac.jp) | 2001年 / Japan Society of Applied Physics卷 / 40期
关键词
D O I
10.1143/jjap.40.l586
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] 1.3-1.6-μm-wavelength quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates
    Matsuda, S
    Asahi, H
    Mori, J
    Watanabe, D
    Asami, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (6B): : L586 - L588
  • [3] Wavelength control of 1.3-1.6μm light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates
    Mori, J
    Nakano, T
    Shimada, T
    Hasegawa, S
    Asahi, H
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) : 1373 - 1375
  • [4] 1.3-1.5 μm wavelength quantum dots self-formed in GaAs/InAs superlattices grown on InP (411) substrates
    Mori, J
    Matsuda, S
    Asami, K
    Asahi, H
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 366 - 369
  • [5] Optical properties of the quantum dot structures self-formed in GaAg/InAs short-period superlattices grown on InP(411)A substrates
    Mori, J
    Nakano, T
    Hasegawa, S
    Asahi, H
    2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 464 - 467
  • [6] GaAs-InAs short-period superlattice/InP(411)A self-formed quantum dot light emitting diodes with 1.3-1.5 μm light emission
    Shimada, T
    Mori, J
    Hasegawa, S
    Asahi, H
    2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2004, : 104 - 107
  • [7] Optical properties of quantum dots self-formed in GaP/InP short period superlattices grown on GaAs (N11) substrates
    Osaka Univ, Osaka, Japan
    Appl Surf Sci, (729-736):
  • [8] Optical properties of quantum dots self-formed in GaP/InP short period superlattices grown on GaAs (N11) substrates
    Kim, SJ
    Asahi, H
    Asami, K
    Takemoto, M
    Fudeta, M
    Gonda, S
    APPLIED SURFACE SCIENCE, 1998, 130 : 729 - 736
  • [9] Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A
    Watanabe, D
    Asahi, H
    Noh, JH
    Fudeta, M
    Mori, J
    Matsuda, S
    Asami, K
    Gonda, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4601 - 4603
  • [10] Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A
    Watanabe, Daisuke
    Asahi, Hajime
    Noh, Joo-Hyong
    Fudeta, Mayuko
    Mori, Jun
    Matsuda, Satoru
    Asami, Kumiko
    Gonda, Shun-Ichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4601 - 4603