Near-infrared luminescence in doped Bi4Ge3O12 crystals

被引：0
|
作者：
Yu, Ping-Sheng [1 ]
Su, Liang-Bi [2 ]
Xu, Jun [2 ]
机构：
[1] School of Materials Engineering, Yancheng Institute of Technology, Yancheng,224051, China
[2] Key Laboratory of Transparent and Opto-Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai,201800, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2015年 / 36卷 / 03期
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
10.3788/fgxb20153603.0283
中图分类号：
学科分类号：
摘要：
Bismuth compounds - Infrared devices - Laser excitation - Germanium compounds - Ions
引用
收藏
页码：283 / 287
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