Plasma charging damage of ultra-thin gate-oxide - the measurement dilemma

被引：0
|
作者：
Cheung, Kin P. [1 ]
Mason, Philip [1 ]
Hwang, David [1 ]
机构：
[1] Bell Lab
来源：
International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings | 2000年
关键词：
Computer simulation - Current density - Current voltage characteristics - Electric breakdown - Gates (transistor) - Integrated circuit layout - Leakage currents - Oxides - Reliability;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We examined the problem of detecting plasma charging damage in deep submicron technology where the gate-oxide is ultra-thin. From the viewpoint of damage impacting gate-oxide reliability, we show that the current available method is incapable to provide sufficient sensitivity.
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页码：10 / 13
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