Design of a Fully Integrated Two-Stage Watt-Level Power Amplifier Using 28-nm CMOS Technology

被引：0
|
作者：
Oßmann, Patrick [1 ]
Fuhrmann, Jörg [2 ,3 ]
Dufrêne, Krzysztof [3 ]
Fritzin, Jonas [4 ]
Moreira, José [4 ]
Pretl, Harald [3 ,5 ]
Springer, Andreas [1 ]
机构：
[1] Institute for Communications Engineering and RF-Systems (NTHFS), Johannes Kepler University, Linz,4040, Austria
[2] Institute for Electronics Engineering, Friedrich-Alexander University Erlangen-Nuremberg, Erlangen-Nuremberg,91054, Germany
[3] Danube Mobile Communications Engineering (DMCE) GmbH and Co. KG, Linz,4040, Austria
[4] Intel Deutschland GmbH, Munich,85579, Germany
[5] Research Institute for Integrated Circuits (RIIC), Johannes Kepler University, Linz,4040, Austria
来源：
IEEE Transactions on Microwave Theory and Techniques | 2016年 / 64卷 / 01期
关键词：
712.1 Semiconducting Materials - 713.1 Amplifiers - 714.2 Semiconductor Devices and Integrated Circuits;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
28
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收藏
页码：188 / 199
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