Gain limitations of scaled InP/InGaAs heterojunction bipolar transistors

被引：0
|
作者：
机构：
来源：
| 1600年 / American Institute of Physics Inc.卷 / 89期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Analysis and growth of InP/InGaAs/InP double heterojunction bipolar transistors with composite collector by GSMBE
    Qi, Ming
    Sun, Hao
    Xu, Anhuai
    Ai, Likun
    Zhu, Fuying
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 165 - 168
  • [32] Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors
    Wang, H
    Ng, GI
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (06) : 1125 - 1133
  • [33] Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors
    Lin, Yu-Shyan
    Jou, Yu-Jeng
    Huang, Pin-Chun
    APPLIED PHYSICS LETTERS, 2009, 94 (06)
  • [34] InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors
    Sato, Hiroya
    Vlcek, James C.
    Fonstad, Clifton G.
    Meskoob, B.
    Prasad, S.
    Electron device letters, 1990, 11 (10): : 457 - 459
  • [35] InGaAs/InP Double Heterojunction Bipolar Transistors with fmax=532GHz
    Cheng Wei
    Wang Yuan
    Niu Bin
    Xie Zi-Li
    Xie Jun-Ling
    Lu Hai-Yan
    Zhao Yan
    Sun Yan
    Chen Tang-Sheng
    2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2015, : 446 - 448
  • [36] Simulation of beryllium diffusion in the base layer of InGaAs/InP heterojunction bipolar transistors
    Marcon, J
    Koumetz, S
    Ketata, M
    Launay, P
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1996, 4 (05) : 443 - 454
  • [37] Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors
    Oxland, R. K.
    Rahman, F.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (08) : 085020
  • [38] ANALYSIS OF DEGRADATION INDUCED BY SILICON NITRIDE IN INP/INGAAs HETEROJUNCTION BIPOLAR TRANSISTORS
    Sachelarie, Dan
    2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 2009, : 727 - 731
  • [39] Fabrication and characterization of circular geometry InP/InGaAs double heterojunction bipolar transistors
    Loga, R
    Loga, R
    Vilches, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (07) : 855 - 858
  • [40] InP/InGaAs heterojunction bipolar transistors with different mu-bridge structures
    Yu Jinyong
    Liu Xinyu
    Xia Yang
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (11)
12345