Frequency characteristics and analysis of quantum resonant tunneling diodes

被引：0
|
作者：
Zhang, Shilin [1 ]
Niu, Pingjuan [1 ]
Liang, Huilai [1 ]
Guo, Weilian [1 ]
Zhao, Zhenbo [1 ]
Hao, Jingchen [2 ]
Wang, Wenjun [2 ]
Zhou, Junming [3 ]
Huang, Qi [3 ]
机构：
[1] Acad. of Electron. Info. Eng., Tianjin Univ., Tianjin 300072, China
[2] 13th Inst., Min. of Info. Indust., Shijiazhuang 050051, China
[3] Inst. of Phys., Chinese Acad. of Sci., Beijing 100080, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 11期
关键词：
Frequency characteristics - Network analyzer - Resonant tunneling diodes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1192 / 1195
相关论文
共 50 条
  • [41] A GaAs acoustic sensor with frequency output based on resonant tunneling diodes
    Zhang, Binzhen
    Wang, Jian
    Xue, Chenyang
    Zhang, Wendong
    Xiong, Jijun
    SENSORS AND ACTUATORS A-PHYSICAL, 2007, 139 (1-2) : 42 - 46
  • [42] HIGH-FREQUENCY CAPACITIVE EFFECTS IN RESONANT-TUNNELING DIODES
    LU, XJ
    RHODES, D
    PERLMAN, BS
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2908 - 2913
  • [43] Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells
    Lee, Joon-Ho
    Shin, Mincheol
    Byun, Seok-Joo
    Kim, Wangki
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2018, 72 (05) : 622 - 627
  • [44] Computer Statistical Experiment for Analysis of Resonant-Tunneling Diodes I-V Characteristics
    Cherkasov, Kirill
    Meshkov, Sergey
    Makeev, Mstislav
    Ivanov, Yury
    Shashurin, Vasily
    Tsvetkov, Yury
    Khlopov, Boris
    INTERNATIONAL SCIENTIFIC CONFERENCE ENERGY MANAGEMENT OF MUNICIPAL FACILITIES AND SUSTAINABLE ENERGY TECHNOLOGIES EMMFT 2018, VOL 2, 2019, 983 : 626 - 634
  • [45] INFLUENCE OF RESISTANCES ON CHARACTERISTICS OF VERTICALLY INTEGRATED RESONANT-TUNNELING DIODES
    FOBELETS, K
    VOUNCKX, R
    BORGHS, G
    ELECTRONICS LETTERS, 1993, 29 (01) : 57 - 59
  • [46] EFFECT OF SPACER LAYER THICKNESS ON THE STATIC CHARACTERISTICS OF RESONANT TUNNELING DIODES
    MEHDI, I
    MAINS, RK
    HADDAD, GI
    APPLIED PHYSICS LETTERS, 1990, 57 (09) : 899 - 901
  • [47] Current-voltage characteristics in double-barrier resonant tunneling diodes with embedded GaAs quantum rings
    Noda, T
    Koguchi, N
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 550 - 553
  • [48] Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well
    Nagase, Masanori
    Tokizaki, Takashi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (05) : 1321 - 1326
  • [49] Resonant tunneling characteristics in crystalline silicon/nanocrystalline silicon heterostructure diodes
    Pan, Wei
    Lu, Jia Jia
    Chen, Jing
    Shen, Wen Zhong
    PHYSICAL REVIEW B, 2006, 74 (12)
  • [50] Comparative analysis of sequential and coherent tunneling models in resonant diodes
    Aleshkin, VY
    Reggiani, L
    Rosini, M
    PHYSICAL REVIEW B, 2006, 73 (16)
12345