Localized charge storage in CeO2/Si(111) by electrostatic force microscopy

被引:0
|
作者
Jones, J.T. [1 ]
Bridger, P.M. [1 ]
Marsh, O.J. [1 ]
McGill, T.C. [1 ]
机构
[1] California Inst of Technology, Pasadena, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
11
引用
收藏
页码:331 / 335
相关论文
共 50 条
  • [1] Localized charge storage in CeO2/Si(111) by electrostatic force microscopy
    Jones, JT
    Bridger, PM
    Marsh, OJ
    McGill, TC
    MATERIALS ISSUES AND MODELING FOR DEVICE NANOFABRICATION, 2000, 584 : 331 - 335
  • [2] Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
    Jones, J.T.
    Bridger, P.M.
    Marsh, O.J.
    McGill, T.C.
    Applied Physics Letters, 75 (09):
  • [3] Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
    Jones, JT
    Bridger, PM
    Marsh, OJ
    McGill, TC
    APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1326 - 1328
  • [4] Si deposition on CeO2/Si(111)
    Shitara, S
    Yamaguchi, K
    Yamamoto, Y
    Satoh, M
    Inoue, T
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16, 1997, : 109 - 114
  • [5] Topography and localized charge of steps on CeO2(111) investigated by AFM/KPFM
    Shu, Pengli
    Guo, Qiang
    Tian, Xin
    Wei, Jiuyan
    Qu, Zhang
    Ren, Xiaosen
    Wen, Huanfei
    Tang, Jun
    Li, Yanjun
    Sugawara, Yasuhiro
    Ma, Zongmin
    Liu, Jun
    SURFACES AND INTERFACES, 2024, 51
  • [6] Mechanical wear behavior between CeO2(100), CeO2(110), CeO2(111), and silicon studied through atomic force microscopy
    Xie, Lile
    Cheng, Jie
    Wang, Tongqing
    Lu, Xinchun
    TRIBOLOGY INTERNATIONAL, 2021, 153
  • [7] Reaction at Si/CeO2(111) interfaces
    Arai, S
    Shitara, S
    Yamamoto, Y
    Satoh, M
    Inoue, T
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997, 1997, : 115 - 120
  • [8] ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111)
    TYE, L
    ELMASRY, NA
    CHIKYOW, T
    MCLARTY, P
    BEDAIR, SM
    APPLIED PHYSICS LETTERS, 1994, 65 (24) : 3081 - 3083
  • [9] Annealing effect of the CeO2 buffer layers for PZT/CeO2/Si(111) structures
    Park, BE
    Imada, S
    Tokumitsu, E
    Ishiwara, H
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 : S1390 - S1392
  • [10] Charge Transport over the Defective CeO2(111) Surface
    Su, Ya-Qiong
    Filot, Ivo A. W.
    Liu, Jin-Xun
    Tranca, Ionut
    Hensen, Emiel J. M.
    CHEMISTRY OF MATERIALS, 2016, 28 (16) : 5652 - 5658