Optical anisotropy of InGaAs quantum dot arrays aligned along multiatomic steps on vicinal GaAs(111) B

被引：0
|
作者：
机构：
[1] Kawazu, Takuya
来源：
Kawazu, Takuya | 2017年 / American Institute of Physics Inc.卷 / 122期
关键词：
Number:; 17K06364; Acronym: [!text type='JS']JS[!/text]PS; Sponsor: Japan Society for the Promotion of Science; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] MAGNITUDE, ORIGIN, AND EVOLUTION OF PIEZOELECTRIC OPTICAL NONLINEARITIES IN STRAINED [111]B INGAAS GAAS QUANTUM-WELLS
    CARTWRIGHT, AN
    MCCALLUM, DS
    BOGGESS, TF
    SMIRL, AL
    MOISE, TS
    GUIDO, LJ
    BARKER, RC
    WHERRETT, BS
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) : 7767 - 7774
  • [42] Influence of GaP compensating layers on the characteristics of GaAs photovoltaic converters with InGaAs quantum dot arrays
    Salii, R. A.
    Mintairov, M. A.
    Mintairov, S. A.
    Nakhimovich, M. V.
    Shvarts, M. Z.
    Kalyuzhnyy, N. A.
    ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2023, 16 (01): : 411 - 415
  • [43] Photoluminescence excitation spectroscopy of InAs/InGaAs/GaAs quantum dot arrays in a wide temperature range
    Rybalko, D. A.
    Nadtochiy, A. M.
    Maximov, M. V.
    INTERNATIONAL CONFERENCE PHYSICA.SPB/2018, 2018, 1135
  • [44] Tuning reactive epitaxy of silicides with surface steps: Silicide quantum dot arrays on Si(111)
    Fernandez, Laura
    Loffler, Mathias
    Cordon, Javier
    Ortega, Enrique
    SUPERLATTICES AND MICROSTRUCTURES, 2008, 44 (4-5) : 378 - 384
  • [45] Electron transport and optical properties of InGaAs quantum wells with quasi-periodic (L0 ∼ 30 nm) interface corrugation grown on vicinal (111)B GaAs
    Noda, T
    Nagamune, Y
    Nakamura, Y
    Sakaki, H
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 333 - 336
  • [46] Molecular beam epitaxial growth of AlGaAs/InGaAs/GaAs planar superlattice structures on vicinal (111)B GaAs and their transport properties
    Akiyama, Y
    Kawazu, T
    Noda, T
    Koshiba, S
    Torii, K
    Sakaki, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1162 - 1165
  • [47] Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
    Martini, S
    Quivy, AA
    Tabata, A
    Leite, JR
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2280 - 2289
  • [48] OPTICAL-PROPERTIES OF A SINGLE STRAINED INGAAS/GAAS QUANTUM-WELL GROWN ON VICINAL GAAS-SURFACES
    DROOPAD, R
    PUECHNER, RA
    SHIRALAGI, KT
    CHOI, KY
    MARACAS, GN
    APPLIED PHYSICS LETTERS, 1991, 58 (16) : 1777 - 1779
  • [49] Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit
    Findeis, F
    Zrenner, A
    Böhm, G
    Abstreiter, G
    SOLID STATE COMMUNICATIONS, 2000, 114 (04) : 227 - 230
  • [50] Optical modes in InGaAs/GaAs quantum dot microtube ring resonators at room temperature
    Li, F.
    Vicknesh, S.
    Mi, Z.
    ELECTRONICS LETTERS, 2009, 45 (12) : 645 - U20
12345