X-ray radiation response of epitaxial and nonepitaxial n-6H-SiC metal-oxide-semiconductor capacitors

被引：0

作者：

De Vasconcelos, Elder Alpes ^{[1
]}

Da Silva Jr., Eronides Felisberto ^{[1
]}

Katsube, Teruaki ^{[2
]}

Yoshida, Sadafumi ^{[2
]}

Nishioka, Yasushiro ^{[3
]}

机构：

[1] Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitaria, Recife-PE, 50670-901, Brazil

[2] Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Urawa-shi, Saitama 338-8570, Japan

[3] Texas Instruments Japan Ltd., Tsukuba Research and Development Center, 17 Miyukigaoka, Tsukuba-shi, Ibaraki 305-0841, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 B期

关键词：

Interface trap generation - Low energy x rays;

D O I：

10.1143/jjap.40.2987

中图分类号：

学科分类号：

摘要：

引用

页码：2987 / 2990

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