Design and Characteristics of Polysilicon Emitter Bipolar Junction Transistors

被引：0

作者：

Shih, Neng-Fu ^{[1
]}

机构：

[1] Department of Electrical Engineering, Hsiuping Institute of Technology, No. 11, Gungye Rd., Dali City, Taichung 412, Taiwan

来源：

| 2003年 / Japan Society of Applied Physics卷 / 42期

关键词：

D O I：

10.1143/jjap.42.l1238

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[41] ON THE MODELING OF POLYSILICON EMITTER TRANSISTORS
BASU, S
PAL, DK
DAW, AN
INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 77 (04) : 441 - 450
[42] INVESTIGATION OF BORON-DIFFUSION IN POLYSILICON AND ITS APPLICATION TO THE DESIGN OF P-N-P POLYSILICON EMITTER BIPOLAR-TRANSISTORS WITH SHALLOW EMITTER JUNCTIONS
POST, IRC
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[43] Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors
J Appl Phys, 5 (2671):
[44] Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors
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[45] ON THE COMMON-EMITTER BREAKDOWN VOLTAGE OF BIPOLAR JUNCTION TRANSISTORS
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[47] HOT CARRIER INDUCED EXCESS CURRENT IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS
GREVE, DW
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C363 - C363
[48] Temperature dependence of 1/f noise in polysilicon-emitter bipolar transistors
Zhao, EH
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (12) : 2230 - 2236
[49] COMPREHENSIVE ANALYTICAL AND NUMERICAL MODEL OF POLYSILICON EMITTER CONTACTS IN BIPOLAR TRANSISTORS.
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IEEE Transactions on Electron Devices, 1984, ED-31 (06) : 773 - 784
[50] MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTORS
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