Electrons, holes, and excitons in GaAs polytype quantum dots

被引：0

作者：

Climente, Juan I. ^{[1
]}

Segarra, Carlos ^{[1
]}

Rajadell, Fernando ^{[1
]}

Planelles, Josep ^{[1
]}

机构：

[1] Departament de Química Física i Analítica, Universitat Jaume i, Castelló,E-12080, Spain

来源：

Journal of Applied Physics | 2016年 / 119卷 / 12期

关键词：

Semiconductor quantum dots - Nanocrystals - Gallium arsenide - Ground state - III-V semiconductors - Polarization - Semiconducting gallium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Single and multi-band k×p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes. © 2016 AIP Publishing LLC.

引用

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