Effects of growth conditions on surface morphology of barrier layer and mobility of the two-dimensional electron gas of AlGaN/GaN HEMT

被引：0
|
作者：
Zhang, Heng [1 ]
Qu, Shuang [2 ]
Wang, Cheng-Xin [2 ]
Hu, Xiao-Bo [1 ]
Xu, Xian-Gang [1 ,2 ]
机构：
[1] State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
[2] Shandong Inspur Huaguang Optoelectronics Co., Ltd., Jinan, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2015年 / 44卷 / 12期
关键词：
AlGaN/GaN HEMTs - AlGaN/GaN high electron mobility transistors - Barrier layers - Growth conditions - Growth pressure - Hydrogen flow - Reactor chamber - Reactor pressures;
D O I：
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学科分类号：
摘要：
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页码：3799 / 3803
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