Synthesis of tantalum nitride coatings with stable sheet-resistance by RF reactive magnetron sputtering

被引：0

作者：

Zhang, Jian ^{[1
]}

Ba, Dechun ^{[1
]}

Zhao, Chongling ^{[1
]}

Lu, Tao ^{[1
]}

机构：

[1] School of Machinery & Automation, Northeastern University, Shenyang, China

来源：

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2015年 / 35卷 / 08期

关键词：

X ray diffraction - Partial pressure - Alumina - Magnetron sputtering - Sheet resistance - Tantalum compounds - Aluminum oxide - Nitrogen compounds - Coatings;

D O I：

10.13922/j.cnki.cjovst.2015.08.10

中图分类号：

学科分类号：

摘要：

The TaN coatings with stable sheet-resistance were deposited by RF magnetron sputtering on alumina substrate in a lab-built reactor. The influence of the growth conditions, including the N2-partial pressure in N2 + Ar mixture, substrate temperature and deposition time, on the microstructures and sheet-resistance of the TaN coatings was investigated with X-ray diffraction and four-probe resistivity measurement. The results show that the N2-partial pressure, substrate temperature and deposition time strongly affect the growth and sheet-resistance of the TaN coatings. For example, as the N2 partial pressure increased from 4% to 6% and 8%, bcc-TaN0.04, fcc-TaN1.13 and amorphous TaN were observed, respectively; and the sheet-resistance rapidly increased. The sheet-resistance decreased to below 100 Ω/ when the substrate temperature rose up to 400. A longer deposition time produced a lower sheet-resistance. The TaN coatings with stable sheet-resistance of 50 Ω/ were synthesized under the optimized conditions. ©, 2015, Science Press. All right reserved.

引用

页码：975 / 978

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