Reactive Deposition Epitaxy of CoSi2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces

被引：0
|
作者：
Hayashi, Yukihiro [1 ,2 ]
Sakai, Akira [1 ]
Ikeda, Hiroya [1 ,4 ]
Zaima, Shigeaki [3 ]
Yasuda, Yukio [1 ]
机构：
[1] Dept. of Crystalline Mat. Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
[2] Electronics Department, Nagoya Municipal Indust. Res. Inst., 3-4-41 Rokuban, Atsuta-ku, Nagoya 456-0058, Japan
[3] Ctr. Coop. Res. Adv. Sci./Technol., Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
[4] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
来源：
| 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Epitaxial CoSi2 on Si(100) by oxide mediated epitaxy
    Kleinschmit, MW
    Yeadon, M
    Gibson, JM
    ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 9 - 13
  • [42] MICROSTRUCTURAL STABILITY OF EPITAXIAL COSI2/SI (001) INTERFACES
    RAJAN, K
    HSIUNG, LM
    JIMENEZ, JR
    SCHOWALTER, LJ
    RAMANATHAN, KV
    THOMPSON, RD
    IYER, SS
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) : 4853 - 4856
  • [43] EPITAXIAL-GROWTH OF COSI2 ON (001) AND (111) SI
    BULLELIEUWMA, CWT
    VANOMMEN, AH
    LANGEREIS, C
    HORNSTRA, J
    EUREM 88, VOLS 1-3: TUTORIALS, INSTRUMENTATION AND TECHNIQUES / PHYSICS AND MATERIALS / BIOLOGY, 1988, 93 : 81 - 82
  • [44] GROWTH OF COSI2 ON SI(001) - STRUCTURE, DEFECTS, AND RESISTIVITY
    JIMENEZ, JR
    SCHOWALTER, LJ
    HSIUNG, LM
    RAJAN, K
    HASHIMOTO, S
    THOMPSON, RD
    IYER, SS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 3014 - 3018
  • [45] EPITAXIAL-GROWTH OF COSI2 ON (001) AND (111) SI
    BULLELIEUWMA, CWT
    VANOMMEN, AH
    LANGEREIS, C
    HORNSTRA, J
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1988, (93): : 81 - 82
  • [46] Energetics of ultrathin COSi2 film on a Si(001) surface
    Kang, BS
    Oh, SK
    Kang, HJ
    Sohn, KS
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (02) : 67 - 76
  • [47] Observation of clean and oxygen-adsorbed Pt(113) surfaces by scanning tunneling microscopy
    Yamanaka, T
    Xue, QK
    Kimura, K
    Matsushima, T
    Hasegawa, Y
    Sakurai, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (6A): : 3562 - 3565
  • [48] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM
    GIBSON, JM
    BEAN, JC
    POATE, JM
    TUNG, RT
    THIN SOLID FILMS, 1982, 93 (1-2) : 99 - 108
  • [49] STRUCTURAL STUDY OF COSI2 GROWN ON (001) AND (111)SI
    BULLELIEUWMA, CWT
    VONOMMEN, AH
    HORNSTRA, J
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 541 - 546
  • [50] Finite element analysis of CoSi2 nanocrystals on Si(001)
    Goldfarb, I
    Banks-Sills, L
    Eliasi, R
    Briggs, GAD
    INTERFACE SCIENCE, 2002, 10 (01) : 75 - 81
12345