Microstructure evolution during silicon oxidation at room temperature under composite ion beam irradiation

被引：0
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作者：
Prikhodko, K.E. [1 ,2 ]
Gurovich, B.A. [1 ]
Komarov, D.A. [1 ]
Goncharova, D.A. [1 ]
Kutuzov, L.V. [1 ]
机构：
[1] National Research Centre, Kurchatov Institute, Kurchatov sq.1, Moscow,123182, Russia
[2] National Research Nuclear University (MEPhI), Kashirskoe sh., 31, 115409, Russia
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 2014年 / 326卷
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摘要：
In this work, we studied the silicon microstructure evolution during its oxidation under composite beam ion irradiation at room temperature. It was found that when the composite ion beam was formed by hydrogen and dry oxygen mixture at low doses (∼1018cm-2), a porous silicon layer was formed. During irradiation, the pore size gradually reduced and at a dose of ∼1020cm-2pores disappear completely, and an uniform layer of silicon oxide was formed. If residual gases and hydrogen are used to generate a composite ion beam, the formation of porous silicon is not found. The final thickness of irradiation-induced silicon oxide corresponded to the projected range of protons at a given energy in both cases. © 2014 Elsevier B.V. All rights reserved.
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页码：273 / 277
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