Photo-ionization effects in high gain gallium arsenide photoconductive semiconductor switches

被引：0
|
作者：
Liu, Hong [1 ,2 ]
Ruan, Chengli [1 ]
机构：
[1] College of Physical Electronics, University of Electronic Science and Technology, Chengdu 610054, China
[2] College of Electronic and Information Engineering, Chengdu University, Chengdu 610106, China
来源：
Guangxue Xuebao/Acta Optica Sinica | 2009年 / 29卷 / 02期
关键词：
Characteristic length - Electron avalanches - Laser triggers - Optimum conditions - Photoconductive semiconductor switches - Recombination radiation - Saturation values - Space threshold;
D O I：
10.3788/AOS20092902.0496
中图分类号：
学科分类号：
摘要：
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收藏
页码：496 / 499
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