Current transport through stacked InAs quantum dots embedded in a schottky barrier

被引：0
|
作者：
Li, Hong-Wei [1 ]
Wang, Tai-Hong [1 ]
机构：
[1] Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
来源：
Wuli Xuebao/Acta Physica Sinica | 2001年 / 50卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have investigated the transport properties of a metal-semiconductor-metal structure containing multi-layers of InAs quantum dots from 77 K to room temperature. Three distinct phenomena are observed in the current-voltage(I-V) curves: the hysteresis loops, current jumps and voltage offsets. Because of the coupling between the multi-layered quantum dots, the devices made of these quantum dots exhibit much more complicated phenomenon than the devices containing single-layer quantum dots. The devices may undergo many metastable states and relaxation processes. These processes would induce current jump structures and noise in the I-V curve.
引用
收藏
页码：2509 / 2510
相关论文
共 50 条
  • [21] Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots
    Lee, HS
    Lee, JY
    Kim, TW
    Choo, DC
    Kim, MD
    Seo, SY
    Shin, JH
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 63 - 68
  • [22] Strain compensation effect on stacked InAs self-assembled quantum dots embedded in GaNAs layers
    Oshima, Ryuji
    Hashimoto, Takayuki
    Shigekawa, Hidemi
    Okada, Yoshitaka
    PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 85 - +
  • [23] 1/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots
    Song, JD
    Choi, WJ
    Han, IK
    Cho, WJ
    Lee, JI
    Yu, YB
    Pyun, CH
    Kim, JH
    Song, JI
    Chovet, A
    NOISE AND INFORMATION IN NANOELECTRONICS, SENSORS, AND STANDARDS II, 2004, 5472 : 432 - 439
  • [24] Current transport mechanisms of Schottky barrier and modified schottky barrier MOSFETs
    Tsui, Bing-Yue
    Lu, Chi-Pei
    ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, : 307 - 310
  • [25] Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots
    Hastas, NA
    Dimitriadis, CA
    Dozsa, L
    Gombia, E
    Amighetti, S
    Frigeri, P
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 3990 - 3994
  • [26] Stacked layers of InAs self-assembled quantum dots
    Khorenko, V
    Malzer, S
    Plagwitz, H
    Khorenko, E
    Döhler, GH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (2-3): : 243 - 246
  • [27] Energy Transfer in Multi-Stacked InAs Quantum Dots
    Akahane, Kouichi
    Yamamoto, Naokatsu
    Naruse, Makoto
    Kawazoe, Tadashi
    Yatsui, Takashi
    Ohtsu, Motoichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
  • [28] Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots
    Arpatzanis, N.
    Tassis, D. H.
    Dimitriadis, C. A.
    Charitidis, C.
    Song, J. D.
    Choi, W. J.
    Lee, J. I.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (10) : 1086 - 1091
  • [29] Theoretical study of embedded InAs quantum dots in GaAs
    Lie, WC
    Acosta, AS
    Fujioka, H
    Mano, T
    Mitsui, T
    Takeuchi, M
    Oshima, M
    JOURNAL OF CRYSTAL GROWTH, 2001, 229 (01) : 615 - 618
  • [30] Millisecond fluorescence in InAs quantum dots embedded in AlAs
    Shamirzaev, TS
    Gilinsky, AM
    Toropov, AI
    Bakarov, AK
    Tenne, DA
    Zhuravlev, KS
    von Borczyskowski, C
    Zahn, DRT
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4): : 282 - 285
12345