Dry etching of SiO2 thin films with perfluoropropenoxide-O2 and perfluoropropene-O2 plasmas

被引:0
|
作者
Fracassi, Francesco [1 ]
D'Agostino, Riccardo [1 ]
Fornelli, Antonella [1 ]
Shirafuji, Tatsuru [2 ]
机构
[1] Fracassi, Francesco
[2] D'Agostino, Riccardo
[3] Fornelli, Antonella
[4] Shirafuji, Tatsuru
来源
Fracassi, F. (fracassi@chimica.uniba.it) | 1600年 / Japan Society of Applied Physics卷 / 41期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:6287 / 6290
相关论文
共 50 条
  • [41] Diffusing behavior of MoO3 on Al2O3 and SiO2 thin films
    Xu, WM
    Yan, JF
    Wu, NZ
    Zhang, HX
    Xie, YC
    Tang, YQ
    Zhu, YF
    SURFACE SCIENCE, 2000, 470 (1-2) : 121 - 130
  • [42] Surface interactions of SO2 and passivation chemistry during etching of Si and SiO2 in SF6/O2 plasmas
    Stillahn, Joshua M.
    Zhang, Jianming
    Fisher, Ellen R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (01):
  • [43] THIN SIO2-FILMS NITRIDED IN N2O
    BELLAFIORE, N
    PIO, F
    RIVA, C
    MICROELECTRONICS JOURNAL, 1994, 25 (07) : 495 - 500
  • [44] MECHANISMS OF THE HF/H2O VAPOR-PHASE ETCHING OF SIO2
    HELMS, CR
    DEAL, BE
    JOURNAL OF THE IES, 1992, 35 (03): : 21 - 26
  • [45] MECHANISMS OF THE HF/H2O VAPOR-PHASE ETCHING OF SIO2
    HELMS, CR
    DEAL, BE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 806 - 811
  • [46] Influence of temperature on the etching rate of SiO2 in CF4+O2 plasma
    Knizikevicius, R
    Kopustinskas, V
    MICROELECTRONIC ENGINEERING, 2006, 83 (02) : 193 - 196
  • [47] Simulations of Si and SiO2 etching in SF6 + O2 plasma
    Knizikevicius, R.
    VACUUM, 2009, 83 (06) : 953 - 957
  • [48] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES
    DAGOSTINO, R
    FLAMM, DL
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 162 - 167
  • [49] Production of SiO2–P2O5–CaO–(Na2O) structured films
    T. S. Petrovskaya
    L. P. Borilo
    Glass and Ceramics, 2012, 69 : 25 - 29
  • [50] Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates
    Xiong, SB
    Sakai, S
    APPLIED PHYSICS LETTERS, 1999, 75 (11) : 1613 - 1615