Polymorphous GdScO3 as high permittivity dielectric

被引:0
|
作者
20153601228597
机构
[1] [1,Schäfer, A.
[2] 2,3,Rahmanizadeh, K.
[3] 2,3,Bihlmayer, G.
[4] 5,Luysberg, M.
[5] 1,Wendt, F.
[6] Besmehn, A.
[7] 1,Fox, A.
[8] 2,Schnee, M.
[9] Niu, G.
[10] Schroeder, T.
[11] 1,Mantl, S.
[12] 1,Hardtdegen, H.
[13] 1,Mikulics, M.
[14] 1,Schubert, J.
来源
Schubert, J. (j.schubert@fz-juelich.de) | 1600年 / Elsevier Ltd卷 / 651期
关键词
High-k dielectric - Energy gap - Epitaxial growth - X ray photoelectron spectroscopy - Amorphous films - Permittivity - Lattice constants - Density functional theory - Pulsed laser deposition - Capacitance - X ray diffraction - High resolution transmission electron microscopy - Oxide films - Thin films;
D O I
暂无
中图分类号
学科分类号
摘要
Four different polymorphs of GdScO3 are assessed theoretically and experimentally with respect to their suitability as a dielectric. The calculations carried out by density functional theory reveal lattice constants, band gaps and the energies of formation of three crystal phases. Experimentally all three crystal phases and the amorphous phase can be realized as thin films by pulsed laser deposition using various growth templates. Their respective crystal structures are confirmed by X-ray diffraction and transmission electron microscopy reflecting the calculated lattice constants. X-ray photoelectron spectroscopy unveils the band gaps of the different polymorphs of GdScO3 which are above 5 eV for all films demonstrating good insulating properties. From capacitance voltage measurements, high permittivities of up to 27 for hexagonal GdScO3 are deduced. © 2015 Elsevier B.V.
引用
收藏
相关论文
共 50 条
  • [21] Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric
    Heidelberger, G.
    Roeckerath, M.
    Steins, R.
    Stefaniak, M.
    Fox, A.
    Schubert, J.
    Kaluza, N.
    Marso, M.
    Lueth, H.
    Kordos, P.
    ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 2006, : 241 - 244
  • [22] COLOR-CENTERS IN GDSCO3 SINGLE-CRYSTALS
    ABDURAZAKOV, AA
    ANTONOV, VA
    ARSENEV, PA
    BAGDASAROV, KS
    GRAVER, VE
    KRUMINSH, IY
    INORGANIC MATERIALS, 1988, 24 (04) : 525 - 529
  • [23] Yb:GdScO3 crystal for efficient ultrashort pulse lasers
    Zhang, Yuhang
    Li, Shanming
    Du, Xiao
    Guo, Jie
    Gong, Qiaorui
    Tao, Siliang
    Zhang, Peixiong
    Fang, Qiannan
    Pan, Shilie
    Zhao, Chengchun
    Liang, Xiaoyan
    Hang, Yin
    OPTICS LETTERS, 2021, 46 (15) : 3641 - 3644
  • [24] Raman scattering of perovskite DyScO3 and GdScO3 single crystals
    Chaix-Pluchery, O.
    Kreisel, J.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (17)
  • [25] Nd3+:GdScO3 crystal field energy level and fitting
    Fan Ying
    Zhang Qing-Li
    Gao Jin-Yun
    Gao Yu-Xi
    Huang Lei
    Liu Yao
    ACTA PHYSICA SINICA, 2024, 73 (04)
  • [26] 2 μm Mode-Locked Tm : GdScO3 Laser
    Wei Wenlong
    Zhang Ning
    Song Qingsong
    Liu Jian
    Wang Zhanxin
    Zhao Yongguang
    Xu Xiaodong
    Xue Yanyan
    Xu Jun
    ACTA OPTICA SINICA, 2023, 43 (22)
  • [27] Thermal expansion of the new perovskite substrates DySCO3 and GdSCO3
    Biegalski, MD
    Haeni, JH
    Trolier-McKinstry, S
    Schlom, DG
    Brandle, CD
    Ven Graitis, AJ
    JOURNAL OF MATERIALS RESEARCH, 2005, 20 (04) : 952 - 958
  • [28] Nd3+:GdScO3晶体场能级及拟合分析
    樊颖
    张庆礼
    高进云
    高宇茜
    黄磊
    刘耀
    物理学报, 2024, 73 (04) : 7 - 14
  • [29] Low temperature magnetism in the rare-earth perovskite GdScO3
    Sheng, Jie-Ming
    Kan, Xu-Cai
    Ge, Han
    Yuan, Pei-Qian
    Zhang, Lei
    Zhao, Nan
    Song, Zong-Mei
    Yao, Yuan-Yin
    Tang, Ji-Ning
    Wang, Shan-Min
    Tian, Ming-Liang
    Tong, Xin
    Wu, Liu-Suo
    CHINESE PHYSICS B, 2020, 29 (05)
  • [30] Growth and spectral properties of Pr, Yb, Ho:GdScO3 crystal
    Sun Gui-Hua
    Zhang Qing-Li
    Luo Jian-Qiao
    Wang Xiao-Fei
    Gu Chang-Jiang
    ACTA PHYSICA SINICA, 2024, 73 (05)