Deposition of Y2O3 thin films by electrostatic spray assisted vapor deposition method

Y2O3 thin films were successfully deposited onto Si (100) substrates by the electrostatic spray assisted vapor deposition (ESAVD) method. The films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results of FE-SEM analysis showed that Y2O3 thin films were homogeneous, uniform and nanostructural. AFM analysis indicated that Y2O3 thin films had low surface roughness (11 nm). XPS analysis results showed that the deposited thin Y2O3 oxide films were close to their stoichiometry. The coalescent strength of the Y2O3 film to the Si substrate was 4.2 N. XRD patterns indicated that Y2O3 thin films with (111) oriented growth were obtained after heat treatment, whilst the Y2O3 thin films were amorphous before heat treatment.