A Technological Review of the Highly Efficient Heterojunction with Intrinsic Thin-layer (HIT) Solar Cells

被引：0
|
作者：
Hao L. [1 ]
Zhang M. [1 ]
Chen W. [1 ]
Feng X. [1 ]
机构：
[1] College of Materials Science and Engineering, Nanjing Tech University, Nanjing
来源：
Feng, Xiaodong (xiaodong_feng@njtech.edu.cn) | 2018年 / Cailiao Daobaoshe/ Materials Review卷 / 32期
关键词：
Band gap; Carrier mobility; Heterojunction with intrinsic thin-layer(HIT); Passivation; Solar cell;
D O I：
10.11896/j.issn.1005-023X.2018.05.001
中图分类号：
学科分类号：
摘要：
Heterojunction with intrinsic thin-layer (HIT) consist of thin amorphous silicon layers deposited on crystalline silicon wafers, which forms a silicon heterojunction (SHJ) structure with the major advantages of full exploitation of the excellent passivation properties of a-Si:H films, and consequently, the energy conversion efficiencies higher than homogenous cells. The paper provides an introduction on the development and the structure of the HIT solar cells, and a discussion upon the wafer layers, the a-Si (undoped/doped) layers, the TCO (transparent conducting oxides) films and the metal grid electrodes from the perspectives of fabrication processes, the principle of passivation, and the band gap. Finally a prospect on the future trends are also proposed. © 2018, Materials Review Magazine. All right reserved.
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页码：689 / 695and714
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