A Technological Review of the Highly Efficient Heterojunction with Intrinsic Thin-layer (HIT) Solar Cells

被引：0
|
作者：
Hao L. [1 ]
Zhang M. [1 ]
Chen W. [1 ]
Feng X. [1 ]
机构：
[1] College of Materials Science and Engineering, Nanjing Tech University, Nanjing
来源：
Feng, Xiaodong (xiaodong_feng@njtech.edu.cn) | 2018年 / Cailiao Daobaoshe/ Materials Review卷 / 32期
关键词：
Band gap; Carrier mobility; Heterojunction with intrinsic thin-layer(HIT); Passivation; Solar cell;
D O I：
10.11896/j.issn.1005-023X.2018.05.001
中图分类号：
学科分类号：
摘要：
Heterojunction with intrinsic thin-layer (HIT) consist of thin amorphous silicon layers deposited on crystalline silicon wafers, which forms a silicon heterojunction (SHJ) structure with the major advantages of full exploitation of the excellent passivation properties of a-Si:H films, and consequently, the energy conversion efficiencies higher than homogenous cells. The paper provides an introduction on the development and the structure of the HIT solar cells, and a discussion upon the wafer layers, the a-Si (undoped/doped) layers, the TCO (transparent conducting oxides) films and the metal grid electrodes from the perspectives of fabrication processes, the principle of passivation, and the band gap. Finally a prospect on the future trends are also proposed. © 2018, Materials Review Magazine. All right reserved.
引用
收藏
页码：689 / 695and714
相关论文
共 74 条
  • [1] Chapin D.M., Fuller C.S., Pearson G.L., A new silicon p-n junction photocell for converting solar radiation into electrical power, Journal of Applied Physics, 25, 5, (1954)
  • [2] Grigorovici R., Croitoru N., Marina M., Et al., Heterojunctions between amorphous Si and Si single crystals, Revue Roumaine de Physique, 13, 4, (1968)
  • [3] Tanaka M., Taguchi M., Matsuyama T., Et al., Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (artificially constructed junction-heterojunction with intrinsic thin-layer), Japanese Journal of Applied Physics, 31, 11, (1992)
  • [4] Wakisaka K., Taguchi M., Sawada T., Et al., More than 16% solar cells with a new'HIT'(doped a-Si/nondoped a-Si/crystalline Si) structure, Conference Record of the Twenty Second IEEE: Photovoltaic Specialists Conference, (1991)
  • [5] Tsunomura Y., Yoshimine Y., Taguchi M., Et al., Twenty-two percent efficiency HIT solar cell, Solar Energy Materials and Solar Cells, 93, 6, (2009)
  • [6] Mishima T., Taguchi M., Sakata H., Et al., Development status of high-efficiency HIT solar cells, Solar Energy Materials and Solar Cells, 95, 1, (2011)
  • [7] Taguchi M., Yano A., Tohoda S., Et al., 24.7% record efficiency HIT solar cell on thin silicon wafer, IEEE Journal of Photovoltaics, 4, 1, (2014)
  • [8] Adachi D., Hernandez J.L., Yamamoto K., Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency, Applied Physics Letters, 107, 23, (2015)
  • [9] Yoshikawa K., Kawasaki H., Yoshida W., Et al., Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%, Nature Energy, 2, (2017)
  • [10] Descoeudres A., Holman Z.C., Barraud L., Et al., > 21% efficient silicon heterojunction solar cells on n- and p-type wafers compared, IEEE Journal of Photovoltaics, 3, 1, (2013)
12345678