Room-temperature cw 1.5 μm InGaAlAs/InP vertical-cavity laser with high efficiency

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作者：
机构：
[1] Ortsiefer, M.
[2] Shau, R.
[3] Boehm, G.
[4] Koehler, F.
[5] Amann, M.-C.
来源：
Ortsiefer, M. | 2000年 / IEEE, Piscataway, NJ, United States卷
关键词：
Emission spectroscopy - Epitaxial growth - Heat resistance - Heat sinks - Heating - Laser modes - Mirrors - Quantum efficiency - Semiconducting gallium arsenide - Semiconducting indium phosphide - Semiconductor quantum wells - Tunnel junctions;
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摘要：
The realization of high-performance monolithic vertical-cavity surface-emitting lasers (VCSELs) on InP for the 1.5 μm wavelength range was demonstrated. Significant progress was achieved by applying a novel device structure with strong built-in lateral current and optical confinement.
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