Observation of macrostep formation on the (0001) facet of bulk SiC crystals

被引：0

作者：

Ohtani, N. ^{[1
]}

Katsuno, M. ^{[1
]}

Aigo, T. ^{[1
]}

Yashiro, H. ^{[1
]}

Kanaya, M. ^{[1
]}

机构：

[1] Adv. Technol. Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan

来源：

Materials Science Forum | 2000年 / 338卷

关键词：

Atomic force microscopy - Crystal growth - Crystal lattices - Morphology - Nitrogen - Reaction kinetics - Semiconducting silicon compounds - Semiconductor doping - Surface topography;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Surface topography of the (0001) facet plane of as-grown 6H-SiC bulk crystals was observed ex-situ by Nomarski optical microscopy (NOM) and atomic force microscopy (AFM). NOM observations revealed giant steps of a few micrometers in height on the (0001) growth facet, and it was found that a morphological transition of the growth facet occurred when the growth conditions were changed. AFM imaging of the stepped structure of 6H-SiC(0001) detected steps of height equal to the unit c-lattice parameter. They are fairly straight and very regularly arranged, giving rise to equidistant step trains. Upon nitrogen doping, these regular step trains on the 6H-SiC(0001¯)C surfaces became unstable: the equidistant step trains were transformed into meandering macrosteps of height greater than 10 nm.

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