Observation of macrostep formation on the (0001) facet of bulk SiC crystals

被引：0
|
作者：
Ohtani, N. [1 ]
Katsuno, M. [1 ]
Aigo, T. [1 ]
Yashiro, H. [1 ]
Kanaya, M. [1 ]
机构：
[1] Adv. Technol. Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Atomic force microscopy - Crystal growth - Crystal lattices - Morphology - Nitrogen - Reaction kinetics - Semiconducting silicon compounds - Semiconductor doping - Surface topography;
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摘要：
Surface topography of the (0001) facet plane of as-grown 6H-SiC bulk crystals was observed ex-situ by Nomarski optical microscopy (NOM) and atomic force microscopy (AFM). NOM observations revealed giant steps of a few micrometers in height on the (0001) growth facet, and it was found that a morphological transition of the growth facet occurred when the growth conditions were changed. AFM imaging of the stepped structure of 6H-SiC(0001) detected steps of height equal to the unit c-lattice parameter. They are fairly straight and very regularly arranged, giving rise to equidistant step trains. Upon nitrogen doping, these regular step trains on the 6H-SiC(0001¯)C surfaces became unstable: the equidistant step trains were transformed into meandering macrosteps of height greater than 10 nm.
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