GaN MOCVD growth on ZnAl2O4/α-Al2O3 substrates

被引：0
|
作者：
Bi, Zhao-Xia [1 ]
Zhang, Rong [1 ]
Li, Wei-Ping [1 ]
Yin, Jiang [1 ]
Shen, Bo [1 ]
Zhou, Yu-Gang [1 ]
Chen, Peng [1 ]
Chen, Zhi-Zhong [1 ]
Gu, Shu-Lin [1 ]
Shi, Yi [1 ]
Liu, Zhi-Guo [1 ]
Zheng, You-Dou [1 ]
机构：
[1] Dept. of Phys., Nanjing Univ., Nanjing 210093, China
来源：
| 2001年 / Science Press卷 / 22期
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摘要：
Gallium nitride
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