Advanced non-quasi-static(NQS) compact model for characterization of non-resonant plasmonic terahertz detector

被引:0
|
作者
Ahn, Sang Hyo [1 ]
Ryu, Min Woo [1 ]
Jang, Esan [1 ]
Jeon, Hyeong Ju [1 ]
Kim, Kyung Rok [1 ]
机构
[1] School of Electronic and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan,44919, Korea, Republic of
关键词
Number:; -; Acronym:; MSIP; Sponsor: Ministry of Science; ICT and Future Planning; NRF; Sponsor: National Research Foundation of Korea;
D O I
2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
中图分类号
学科分类号
摘要
Plasmonics
引用
收藏
页码:297 / 300
相关论文
共 50 条
  • [41] Non-Quasi-Static Nonlinear Model for FinFETs Using Higher-Order Sources
    Homayouni, S. M.
    Schreurs, D.
    Nauwelaers, B.
    Crupi, G.
    2008 WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE- WAVE CIRCUITS (INMMIC), 2008, : 9 - +
  • [42] Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors
    Zhang, Lei
    Rueda, Hernan
    Kim, Kevin
    Aaen, Peter
    2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 548 - 550
  • [43] Systematic calibration of AC MOSFET model parameters including non-quasi-static effect
    Miliozzi, P
    Matloubian, M
    Tennyson, M
    IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS, 1998, : 215 - 217
  • [44] AN ANALYTICAL MODEL FOR THE NON-QUASI-STATIC SMALL-SIGNAL BEHAVIOR OF SUBMICRON MOSFETS
    SMEDES, T
    KLAASSEN, FM
    SOLID-STATE ELECTRONICS, 1995, 38 (01) : 121 - 130
  • [45] A compact CAD model for amorphous silicon thin film transistors simulation .2. Transient non-quasi-static analysis
    Merckel, G
    Rolland, A
    SOLID-STATE ELECTRONICS, 1996, 39 (08) : 1241 - 1245
  • [46] A NON-QUASI-STATIC SMALL-SIGNAL MODEL FOR METAL-SEMICONDUCTOR JUNCTION DIODES
    LIOU, JJ
    LEE, K
    KNAPP, SM
    SUNDARAM, KB
    YUAN, JS
    MALOCHA, DC
    BELKERDID, M
    SOLID-STATE ELECTRONICS, 1990, 33 (12) : 1629 - 1632
  • [47] Non-quasi-static Effects Simulation of Microwave Circuits based on Physical Model of Semiconductor Devices
    Xu, Ke
    Chen, Xing
    Chen, Qiang
    APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL, 2020, 35 (09): : 992 - 998
  • [48] A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique
    Raffo, Antonio
    Avolio, Gustavo
    Vadala, Valeria
    Schreurs, Dominique M. M. -P.
    Vannini, Giorgio
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2015, 25 (12) : 841 - 843
  • [49] Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
    Crupi, Giovanni
    Schreurs, Dominique M. M. -P.
    Caddemi, Alina
    Angelov, Iltcho
    Homayouni, Majid
    Raffo, Antonio
    Vannini, Giorgio
    Parvais, Bertrand
    MICROELECTRONIC ENGINEERING, 2009, 86 (11) : 2283 - 2289
  • [50] Technology-Independent Non-Quasi-Static Table-Based Nonlinear Model Generation
    Homayouni, Seyed M.
    Schreurs, Dominique M. M. -P.
    Crupi, Giovanni
    Nauwelaers, Bart K. J. C.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (12) : 2845 - 2852