Investigation of magnetic tunneling junctions with wedge-shaped barrier

被引：0
|
作者：
Du, J. [1 ]
Xiang, X.H. [2 ]
Landry, G. [2 ]
You, B. [1 ]
Hu, A. [1 ]
Zhao, H.W. [3 ]
Xiao, John Q. [2 ]
机构：
[1] Du, J.
[2] Xiang, X.H.
[3] Landry, G.
[4] You, B.
[5] Hu, A.
[6] Zhao, H.W.
[7] Xiao, John Q.
来源：
Du, J. | 1600年 / American Institute of Physics Inc.卷 / 91期
关键词：
Tunnel junctions;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By oxidizing wedge-shaped Al films we were able to simultaneously fabricate Ni80Fe20/AlOx/Ni80Fe20 tunnel junctions with over, completely, and underoxidized barriers. We have systematically investigated TMR ratio, resistance, barrier height and thickness, and bias dependence along the wedge. The bias dependence of MR ratio is asymmetric in overoxidized regions and symmetric in underoxidized regions. The interesting bias dependences of resistance at parallel and antiparallel configurations will also be presented.© 2002 American Institute of Physics.
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