Modeling and simulation with spice of the new power SiC JFET

被引：0
|
作者：
Lotfi, Messaadi [1 ]
Zohir, Dibi [1 ]
机构：
[1] Department of Electronics, Advanced Electronic Laboratory (LEA), Batna University, Avenue Mohamed El-hadi Boukhlouf, Batna, Algeria
来源：
International Journal of u- and e- Service, Science and Technology | 2014年 / 7卷 / 05期
关键词：
D O I：
10.14257/ijunnesst.2014.7.5.07
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：79 / 86
相关论文
共 50 条
  • [1] SPICE Modeling and Dynamic Electrothermal Simulation of SiC Power MOSFETs
    d'Alessandro, V.
    Magnani, A.
    Riccio, M.
    Breglio, G.
    Irace, A.
    Rinaldi, N.
    Castellazzi, A.
    2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, : 285 - 288
  • [2] SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology
    Liu, Tianshi
    Zhang, Hua
    Isukapati, Sundar Babu
    Ashik, Emran
    Morgan, Adam J.
    Lee, Bongmook
    Sung, Woongje
    Fayed, Ayman
    White, Marvin H.
    Agarwal, Anant K.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2022, 10 : 129 - 138
  • [3] SiC Power JFET Electrothermal Macromodel
    Masana, Francesc
    Chavarria, Javier
    Biel, Domingo
    Poveda, Alberto
    Guinjoan, Francesc
    Alarcon, Eduard
    MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013, 2013, : 444 - 447
  • [4] A new approach to the modeling of converters for SPICE simulation
    Lee, Yim-Shu
    Cheng, David K.W.
    Wong, S.C.
    IEEE Transactions on Power Electronics, 1992, 7 (04) : 741 - 753
  • [5] JFET CIRCUIT SIMULATION USING SPICE IMPLEMENTED WITH AN IMPROVED MODEL
    WONG, WW
    LIOU, JJ
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1994, 13 (01) : 105 - 109
  • [6] SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology
    Liu, Tianshi
    Zhang, Hua
    Isukapati, Sundar Babu
    Ashik, Emaran
    Morgan, Adam J.
    Lee, Bongmook
    Sung, Woongje
    White, Marvin H.
    Fayed, Ayman
    Agarwal, Anant K.
    2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2021, : 966 - 969
  • [7] DC characteristics of power SiC-JFET
    Bargiel, Kamil
    Bisewski, Damian
    PRZEGLAD ELEKTROTECHNICZNY, 2018, 94 (08): : 63 - 66
  • [8] Approximate SPICE Modeling of SiC MOSFETs
    Kubulus, Pawel Piotr
    Meinert, Janus Dybdahl
    Beczkowski, Szymon
    Jorgensen, Asger Bjorn
    Munk-Nielsen, Stig
    Peftitsis, Dimosthenis
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (04) : 5201 - 5211
  • [9] Temperature Effects on Performance of SiC Power Transistors (SiC JFET and SiC MOSFET)
    Zhu Ping
    Wang Li
    Ruan Li-gang
    Zhang Jian-feng
    2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE), 2015,
  • [10] Modeling and High Temperature Characterization of SiC-JFET
    Mousa, R.
    Planson, D.
    Morel, H.
    Allard, B.
    Raynaud, C.
    2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, 2008, : 3111 - 3117
12345