A CMOS image sensor with high sensitivity and low dark current

被引：0
|
作者：
Inoue, I. [1 ]
Yamaguchi, T. [1 ]
Nozaki, H. [1 ]
Miyagawa, R. [1 ]
Manabe, S. [1 ]
机构：
[1] Microelectronics Eng. Laboratory, Toshiba Corp. Semiconductor Co., 2-5-1, Kasama-cho, Sakae-Ku, Yokohama 247-8585, Japan
来源：
Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers | 2001年 / 55卷 / 02期
关键词：
Charge coupled devices - Charge transfer - Dislocations (crystals) - Leakage currents - Oxidation - Photodiodes - Sensitivity analysis - Stresses;
D O I：
10.3169/itej.55.257
中图分类号：
学科分类号：
摘要：
A CMOS image sensor with a very low-leakage photodiode and a low voltage buried photodiode has been developed that has sensitivity comparable to that of conventional CCD imagers. Photodiode leakage current caused by stress originates in the surface damage and in the dislocations and defects near the local oxidation of silicon. Use of a dislocation-free stress-release process and of a buried photodiode reduced the damage and eliminates the stress. A 1/4 inch 330 K pixel CMOS image sensor using this buried photodiode structure and a sensor-specified process had a low dark current of 0.1 nA/cm2 in 5.6 μm pixels. The buried photodiode can operate in complete charge transfer mode at voltage as low as 3.3 V, thereby suppressing the image lag and FPN of the photodiode.
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页码：257 / 263
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