Electric-field-induced controlled motion of polar meron in epitaxially strained BiFeO3 thin film

被引:0
|
作者
Mantri, Sukriti [1 ,2 ]
Prokhorenko, Sergei [1 ,2 ]
Nahas, Yousra [1 ,2 ]
Bellaiche, Laurent [1 ,2 ,3 ]
机构
[1] Univ Arkansas, Smart Ferro Mat Ctr, Phys Dept, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
[3] Tel Aviv Univ, Dept Mat Sci & Engn, Ramat Aviv, IL-6997801 Tel Aviv, Israel
来源
PHYSICAL REVIEW MATERIALS | 2024年 / 8卷 / 10期
基金
澳大利亚研究理事会;
关键词
VORTICES;
D O I
10.1103/PhysRevMaterials.8.104406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using first principles-based effective Hamiltonian, electric field-controlled (reversible and repeatable) motion of spontaneously created topological charge particle across the thickness of a (001)-oriented epitaxially strained BiFeO3 3 thin film is studied. It is shown that the electric field below a critical value moves this topological particle reversibly and gradually up and down across the film thickness, while the field higher than the critical value moves it from the bottom of the thin film straight to the top and back under alternating positive and negative fields. These field-controlled mobile topological charge particles are shown to be chiral and have topological charge corresponding to a meron. These electric-field-controlled meron motions can provide inspiration for the future of topological entity-based ferroelectric memory devices.
引用
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页数:13
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