Mathematical Modelling and Analysis of Memristors with and without its Temperature Effects

被引：5
|
作者：
Prasad B. [1 ]
Maddu K. [1 ]
Lakshmi V. [1 ]
机构：
[1] Gudlavalleru Engineering College Gudlavalleru, Department of Electronics and Communications, Gudlavalleru
来源：
International Journal of Electronics and Telecommunications | 2017年 / 63卷 / 02期
关键词：
Charge; flux; Memristance; Memristor; Temperature;
D O I：
10.1515/eletel-2017-0024
中图分类号：
学科分类号：
摘要：
In this paper the main goal is to study the principle structure and characteristics of single and multiple memristors and also the temperature effects. The complete analysis described here is done by using matlab Simulink. The relationship between the on resistance, off resistance and ionic mobility with respect to temperature has been analyzed and shown graphically. The memristor can be used as a High speed switch and it can be used in non volatile computer memories due to its higher switching speeds. © by Bhavani Prasad 2017.
引用
收藏
页码：181 / 186
页数：5
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