Defect analysis of SiC sublimation growth by the in-situ X-ray topography

被引:0
|
作者
Kato, T. [1 ]
Oyanagi, N. [2 ]
Yamaguchi, H. [1 ]
Nishizawa, S. [1 ]
Arai, K. [1 ]
机构
[1] Ultra-Low-Loss Pwr. Device T., Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
[2] Ultra-Low-Loss Pwr. Device T., R and D Assoc. Fut. Electron Devices, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
关键词
Crystal growth - Density (specific gravity) - Dislocations (crystals) - Grain boundaries - Imaging techniques - Nucleation - Optical microscopy - Single crystals - Sublimation - Thermal effects - X ray analysis;
D O I
10.4028/www.scientific.net/msf.353-356.295
中图分类号
学科分类号
摘要
Silicon carbide (SiC) single crystal growth was studied by the in-situ observation using x-ray topographic technique. Occurrence and dynamics of defects, dislocations were observed in a real time display and captured as topographic images during sublimation growth (modified Lely method) of SiC crystals. From the analysis of these topographic images, high-density of dislocations and typical large defects, such as micropipes, domain boundaries and macrodefects were investigated. On the basis of our in-situ observation and analysis, we argue that dislocation and nucleation control on the seed crystal during initial growth are of prime importance for producing high quality SiC crystals.
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页码:295 / 298
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