Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN

被引：0

作者：

Okada, Narihito ^{[1
]}

Yamada, Yoichi ^{[1
]}

Tadatomo, Kazuyuki ^{[1
]}

机构：

[1] Okada, Narihito

[2] Yamada, Yoichi

[3] Tadatomo, Kazuyuki

来源：

Okada, N. (nokada@yamaguchi-u.ac.jp) | 1600年 / American Institute of Physics Inc.卷 / 111期

关键词：

Templates consisting of in-plane alternately arranged relaxed InGaN and GaN were obtained by (11-22) facet growth and mass transport via metal-organic vapor phase epitaxy. InGaN/GaN multi-quantum wells (MQWs) were grown on the novel templates; and their optical and structural properties were investigated. From photoluminescence measurement; longer and shorter peak emission wavelengths were observed from the MQWs on the InGaN and GaN regions; respectively. The discrepancy of the peak emission wavelength for the MQWs on the alternately arranged relaxed InGaN and GaN was caused by the compositional-pulling effect; which contributed to the InN molar fraction and the thickness of the InGaN quantum well. The reduction of the quantum-confined Stark effect on the InGaN region of the template was confirmed by revealing the structural and optical properties of the MQWs. © 2012 American Institute of Physics;

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