High-power highly reliable Al-free 940-nm diode lasers

被引：33

作者：

Erbert, G. ^{[1
]}

Beister, G. ^{[1
]}

Hülsewede, R. ^{[1
]}

Knauer, A. ^{[1
]}

Pittroff, W. ^{[1
]}

Sebastian, J. ^{[1
]}

Wenzel, H. ^{[1
]}

Weyers, M. ^{[1
]}

Tränkle, G. ^{[1
]}

机构：

[1] Ferdinand-Braun-Inst. fur Hochstfre., D-12489 Berlin, Germany

来源：

IEEE Journal on Selected Topics in Quantum Electronics | 2001年 / 7卷 / 02期

关键词：

Energy gap - High power lasers - Laser beams - Light emission - Metallorganic vapor phase epitaxy - Reliability - Semiconducting indium gallium arsenide - Semiconductor device manufacture - Semiconductor device structures - Semiconductor quantum wells - Thermodynamic stability - Waveguides;

D O I：

10.1109/2944.954122

中图分类号：

学科分类号：

摘要：

Al-free diode lasers emitting at 940 nm having a broadened step-index waveguide structure and a single active InGaAs quantum well have been realized by MOVPE. The impact of waveguide thickness on device performance has been studied. The highest wall plug efficiency of about 60% has been obtained with diode lasers having a 1-μm-thick waveguide. Increasing the waveguide thickness to 1.5 μm resulted in record low degradation rates below 10-5 h-1 for 3-W output power (100 μm stripe width). The same diode lasers showed a good long-term reliability even at an output power of 4 W. The best beam quality had diode lasers with a 2-μm-thick waveguide, at the expense of a reduced temperature stability.

引用

页码：143 / 148

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