Electrical and photovoltaic characteristics of MoS2/Si p-n junctions

被引:0
|
作者
20151300693780
机构
[1] Hao, Lanzhong
[2] Liu, Yunjie
[3] Gao, Wei
[4] Han, Zhide
[5] Xue, Qingzhong
[6] Zeng, Huizhong
[7] Wu, Zhipeng
[8] Zhu, Jun
[9] Zhang, Wanli
来源
| 1600年 / American Institute of Physics Inc.卷 / 117期
关键词
Molybdenum disulfide;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] Design Principles for Photovoltaic Devices Based on Si Nanowires with Axial or Radial p-n Junctions
    Christesen, Joseph D.
    Zhang, Xing
    Pinion, Christopher W.
    Celano, Thomas A.
    Flynn, Cory J.
    Cahoon, James F.
    NANO LETTERS, 2012, 12 (11) : 6024 - 6029
  • [32] Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2 p-n Heterostructures
    Huo, Nengjie
    Tongay, Sefaattin
    Guo, Wenli
    Li, Renxiong
    Fan, Chao
    Lu, Fangyuan
    Yang, Juehan
    Li, Bo
    Li, Yongtao
    Wei, Zhongming
    ADVANCED ELECTRONIC MATERIALS, 2015, 1 (05):
  • [33] EFFECT OF UNIFORM STRESS ON SI P-N JUNCTIONS
    WOOTEN, FT
    BROOKS, AD
    WORTMAN, JJ
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (07): : 1221 - &
  • [34] Electrical characterization of GaSb buried p-n junctions
    Baldini, M.
    Gombia, E.
    Parisini, A.
    Tarricone, L.
    Ghezzi, C.
    Frigeri, C.
    Gasparotto, A.
    NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 239 - 242
  • [35] PHOTOVOLTAIC NOISE IN SILICON BROAD AREA P-N JUNCTIONS
    GIANOLA, UF
    JOURNAL OF APPLIED PHYSICS, 1956, 27 (01) : 51 - 54
  • [36] Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions
    Wui Chung Yap
    Zhengfeng Yang
    Mehrshad Mehboudi
    Jia-An Yan
    Salvador Barraza-Lopez
    Wenjuan Zhu
    Nano Research, 2018, 11 : 420 - 430
  • [37] Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment
    Liang, J.
    Nishida, S.
    Arai, M.
    Shigekawa, N.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (03)
  • [38] Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions
    Yap, Wui Chung
    Yang, Zhengfeng
    Mehboudi, Mehrshad
    Yan, Jia-An
    Barraza-Lopez, Salvador
    Zhu, Wenjuan
    NANO RESEARCH, 2018, 11 (01) : 420 - 430
  • [39] Giant lateral photovoltaic effect in MoS2/SiO2/Si p-i-n junction
    Hao, L. Z.
    Liu, Y. J.
    Han, Z. D.
    Xu, Z. J.
    Zhu, J.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 735 : 88 - 97
  • [40] Carrier Transport and Photoresponse in GeSe/MoS2 Heterojunction p-n Diodes
    Tan, Dezhi
    Wang, Xiaofan
    Zhang, Wenjin
    Lim, Hong En
    Shinokita, Keisuke
    Miyauchi, Yuhei
    Maruyama, Mina
    Okada, Susumu
    Matsuda, Kazunari
    SMALL, 2018, 14 (22)