CVD technologies used in preparation of low dielectric constant materials for ULSI

被引：0
|
作者：
Wang, P.F.
Ding, S.J.
Zhang, W.
Wang, J.T.
Li, W.
机构：
来源：
Weixi Jiagong Jishu/Microfabrication Technology | 2001年 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Low dielectric constant materials for ULSI interconnects
    Morgen, M
    Ryan, ET
    Zhao, JH
    Hu, C
    Cho, TH
    Ho, PS
    ANNUAL REVIEW OF MATERIALS SCIENCE, 2000, 30 : 645 - 680
  • [2] Low-dielectric-constant materials for ULSI interlayer-dielectric applications
    Lee, WW
    Ho, PS
    MRS BULLETIN, 1997, 22 (10) : 19 - 24
  • [3] Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications
    Wei William Lee
    Paul S. Ho
    MRS Bulletin, 1997, 22 : 19 - 27
  • [4] DIELECTRIC MATERIALS FOR ADVANCED VLSI AND ULSI TECHNOLOGIES
    OBENG, YS
    STEINER, KG
    VELAGA, AN
    PAI, CS
    AT&T TECHNICAL JOURNAL, 1994, 73 (03): : 94 - 111
  • [5] Integration issues for low dielectric constant materials in each generation of ULSI's
    Gomi, H
    Kishimoto, K
    Usami, T
    Koyanagi, K
    Yokoyama, T
    Oda, N
    Matsubara, Y
    ADVANCED INTERCONNECTS AND CONTACTS, 1999, 564 : 509 - 519
  • [6] Integration issues for low dielectric constant materials in each generation of ULSI's
    ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Kanagawa, 229-1198, Japan
    Mater Res Soc Symp Proc, (161-171):
  • [7] Poly(arylene ethers) as low dielectric constant materials for ULSI interconnect applications
    Vrtis, RN
    Heap, KA
    Burgoyne, WF
    Robeson, LM
    LOW-DIELECTRIC CONSTANT MATERIALS II, 1997, 443 : 171 - 176
  • [8] PTFE nanoemulsions as spin-on, low dielectric constant materials for ULSI applications
    Rosenmayer, T
    Wu, H
    ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 : 463 - 468
  • [9] Integration issues for low dielectric constant materials in each generation of ULSI's
    Gomi, H
    Kishimoto, K
    Usami, T
    Koyanagi, K
    Yokoyama, T
    Oda, N
    Matsubara, Y
    LOW-DIELECTRIC CONSTANT MATERIALS V, 1999, 565 : 161 - 171
  • [10] Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation
    Qin, S
    Zhou, YZ
    Chan, C
    Chu, PK
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (11) : 420 - 422
12345